Samsung a global
leader in high-performance storage technology, has made announcement that it
will begin mass production of the fifth-generation V-NAND memory chip,
bestowing the fastest data transfer available today. With the industry's first
"Toggle DDR 4.0" interface, Samsung's new 256 gigabit (GB) data
transfer speed between memory and storage reaches 1.4 gigabits / second (Gbps),
40% of 64 levels. The energy efficiency of the new Samsung V-NAND is comparable
to the energy efficiency of a 64-layer chip, mainly due to the drop in
operating voltage from 1.8 volts to 1.2 volts. In the new V-NAND, the data
write speed is the fastest 500 microseconds (μs), which is about 30% higher
than the write speed of the previous generation, and the response time to the
read signal was abruptly set to 50 μsec.s reduced.
Samsung's
fifth-generation V-NAND incorporates more than 90% of the world's largest
battery of 3D charge capture (CTF) batteries. These channel holes have widths
of only a few hundred nanometers and contain over 85 billion CTF cells, each of
which has a capacity of holding store 3 data bits. This advanced memory
manufacturing is the result of many innovations, including advanced circuit
design and new process technologies.
Samsung's flash memory products
and executive vice president of technology Kye Hyun Kyung (Kye Hyun Kyung)
said: "Samsung's fifth-generation V-NAND products and solutions will
provide the most advanced NAND in the rapidly growing high-end memory
market." of the leadership announced today, 1 TB (Tb) for the V-NAND line,
We are preparing to introduce Level 4 cell products (QLC) and will continue to
promote the next generation NAND to the whole world.
As Samsung continues to lead the high-density memory area
such as supercomputing, enterprise server, latest mobile applications, etc. as
the main smart phone, in order to respond to a wide range of market needs, Samsung will manufacture the fifth
generation V-NAND We are planning to expand rapidly.
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